STFI13NK60Z datasheet(3/13 Pages) STMICROELECTRONICS

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STFI13NK60Z

Electrical ratings

Doc ID 018969 Rev 3

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

600

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

13 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

8.2 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

52(1)

PTOT

Total dissipation at TC = 25 °C

ESD

Gate-source human body model (R=1,5 k

Ω, C=100 pF)

dv/dt (3)

ISD < 13 A, di/dt < 200 A/µs, VDD= 80% V(BR)DSS.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all three leads

to external heat sink (t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case Max

3.6

°C/W

Rthj-amb

Thermal resistance junction-amb Max

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Repetitive or non repetitive avalanche current

10(1)

Limited by maximum junction temperature

EAS

Single pulse avalanche energy

(starting Tj=25 °C, ID=IAR, VDD= 50 V)

400

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