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STP150N10F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP150N10F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() This is information on a product in full production. August 2014 DocID024552 Rev 4 1/15 STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data Figure 1. Internal schematic diagram Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. I PAK 2 TO-220 1 2 3 TAB 1 2 3 TAB Order codes VDS RDS(on)max ID PTOT STI150N10F7 100 V 0.0042 Ω 110 A 250 W STP150N10F7 Table 1. Device summary Order codes Marking Package Packaging STI150N10F7 150N10F7 I2PAK Tube STP150N10F7 TO-220 www.st.com |
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