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BAL99 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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BAL99 Datasheet(HTML) 1 Page - Zetex Semiconductors |
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1 / 1 page ![]() SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES ISSUE 2 - JUNE 1995 PIN CONFIGURATIONS PARTMARKING DETAILS BAL99 - E2 BAR99 - E3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 70 V Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current ( over any 20mS Period) IF(AV) 100 mA Repetitive Peak Forward Current IFRM 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Forward Voltage VF 715 855 1.1 1.3 mV mV V V IF=1mA IF=10mA IF=50mA IF=100mA Reverse Current IR 30 2.5 50 µ A µ A µ A VR=25V, Tj=150°C VR=70V VR=70V, Tj=150°C Diode Capacitance Cd 1.5 pF f=1MHz Forward Recovery Voltage Vfr 1.75 V Switched to IF=10mA, tr=20ns Reverse Recovery Time trr 6 ns Switched from IF=10mA, VR=1V RL=100Ω, IR=1mA Spice parameter data is available upon request for this device For switching circuit information refer to BAV99 datasheet. BAL99 BAR99 ! BAL99 BAR99 1 3 2 SOT23 BAL99 BAR99 |
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