SI5933DC datasheet(2/4 Pages) VISHAY

2 / 4 page

Si5933DC

Vishay Siliconix

www.vishay.com

2-2

Document Number: 71238

S-21251—Rev. B, 05-Aug-02

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = --250 mA

--0.45

Gate-Body Leakage

IGSS

VDS =0 V, VGS = 8V

100

Zero Gate Voltage Drain Current

IDSS

VDS =--16 V, VGS =0 V

--1

Zero Gate Voltage Drain Current

IDSS

VDS =--16 V, VGS =0 V, TJ =85_C

--5

On-State Drain Currenta

ID(on)

VDS  --5 V, VGS =--4.5 V

--10

VGS =--4.5 V, ID =--2.7 A

0.095

0.110

Drain-Source On-State Resistancea

rDS(on)

VGS =--2.5 V, ID =--2.2 A

0.137

0.160

Ω

DS(on)

VGS =--1.8 V, ID =--1 A

0.205

0.240

Forward Transconductancea

gfs

VDS =--10 V, ID =--2.7 A

Diode Forward Voltagea

VSD

IS =--0.9 A, VGS =0 V

--0.8

--1.2

Dynamicb

Total Gate Charge

4.4

6.5

Gate-Source Charge

Qgs

VDS =--10 V, VGS =--4.5 V, ID =--2.7 A

1.4

Gate-Drain Charge

Qgd

0.65

Turn-On Delay Time

td(on)

Rise Time

VDD =--10 V,RL =10 Ω

Turn-Off Delay Time

td(off)

VDD = --10 V, RL = 10 Ω

ID ≅ --1 A, VGEN =--4.5 V, RG =6 Ω

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = --0.9 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 5 thru3V

TC =--55_C

125_C

25_C

Output Characteristics

Transfer Characteristics

VDS -- Drain-to-Source Voltage (V)

VGS -- Gate-to-Source Voltage (V)

1.5 V

2.5 V

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