2STF2550 datasheet(3/8 Pages) STMICROELECTRONICS

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2STF2550 - 2STN2550

Electrical characteristics

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -50 V

-0.1

μA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -4 V

-0.1

μA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = -100 μA-50

V(BR)CEO

(1)

Pulsed duration = 300

μs, duty cycle ≤1.5%

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10 mA

-50

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100 μA-5

hFE

(1)

DC current gain

IC = -0.5 A

VCE = -2 V

IC = -2 A

VCE = -2 V

IC = -3 A

VCE = -2 V

IC = -5 A

VCE = -5 V

110

350

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -3 A

IB = -300 mA

-0.39

-0.55

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -3 A

IB = -300 mA

-1

-1.2

CCBO

Collector-base

capacitance (IE = 0)

VCB = -10 V, f = 1 MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = -1.5 A

VCC = -10 V

IB1 = -IB2 = -150 mA

3 00

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