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STGAP1STR Datasheet(PDF) 38 Page - STMicroelectronics

Part # STGAP1STR
Description  gapDRIVE™: galvanically isolated single gate driver
PDF  67 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGAP1STR Datasheet(HTML) 38 Page - STMicroelectronics

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Functional description
STGAP1S
38/67
DocID027190 Rev 3
To ensure the check result, some applicative conditions have to be verified:
The bleeding resistor, sometimes present between the gate and source in the
power switch, shall be lower than 8.2 k
.
During the test, the power switch gate shall have the time to be charged up to
VCLAMPth by IGOFFchk. In case no bleeding resistor is present, this time can be
roughly computed as:
tGATE_GOFFchk ≈ CGATE * (VCLAMPth - VL) / IGOFFchk
If a bleeding resistor is present or an additional push-pull circuit has been added,
the time has to be computed with the adequate corrective factors.
If the check fails due to the lack of the GOFF resistor, the power switch gate will gradually
rise up to VH with no protections of SENSE nor DESAT. The user test routine shall consider
this behavior.
Figure 17. Gate paths check circuitry
Floating
Section
Control
Logic
Floating ground
VH
GON
GOFF
VL
CLAMP
GNDISO
VCLAMPth
+
Level
Shifter
SD
SDO
CK
CS
SDI
SPI
Control
Logic
I
S
O
L
A
T
I
O
N
IGOFFchk
VH testcontrol



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