STGF7H60DF datasheet(3/25 Pages) STMICROELECTRONICS

3 / 25 page

DocID027555 Rev 2

3/25

STGB7H60DF, STGF7H60DF, STGP7H60DF

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

14(1)

Limited by maximum junction temperature.

Continuous collector current at TC = 100 °C

7(1)

ICP

(2)

2. Pulse width limited by maximum junction temperature.

Pulsed collector current

28(1)

VGE

Gate-emitter voltage

±20

Continuous forward current TC = 25 °C

14(1)

Continuous forward current at TC = 100 °C

7(1)

IFP

(2)

Pulsed forward current

28(1)

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s, TC = 25 °C)

2500

PTOT

Total dissipation at TC = 25 °C

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

Table 3. Thermal data

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

RthJC

Thermal resistance junction-case IGBT

1.7

6.2

°C/W

RthJC

Thermal resistance junction-case diode

2.8

6.25

°C/W

RthJA

Thermal resistance junction-ambient

62.5

°C/W

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