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STGB30M65DF2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STGB30M65DF2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page  April 2017 DocID027431 Rev 3 1/18 This is information on a product in full production. www.st.com STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGB30M65DF2 G30M65DF2 D²PAK Tape and reel 1 3 TAB D²PAK 2 |
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Similar Description - STGB30M65DF2 |
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