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STGFW30H65FB Datasheet(PDF) 5 Page - STMicroelectronics |
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STGFW30H65FB Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 20 page ![]() DocID025849 Rev 5 5/20 STGFW30H65FB, STGW30H65FB, STGWT30H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, see Figure 27 -37 - ns tr Current rise time - 14.6 - ns (di/dt)on Turn-on current slope - 1643 - A/µs td(off) Turn-off delay time 146 - ns tf Current fall time - 23 - ns Eon (1) 1. Energy losses include reverse recovery of the external diode. Turn-on times and energy have been measured applying as freewheeling an external SiC diode STPSC206W Turn-on switching losses - 151 - µJ Eoff (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 293 - µJ Ets Total switching losses - 444 - µJ td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 27 -35 - ns tr Current rise time - 16.1 - ns (di/dt)on Turn-on current slope - 1496 - A/µs td(off) Turn-off delay time - 158 - ns tf Current fall time - 65 - ns Eon (1) Turn-on switching losses - 175 - µJ Eoff (2) Turn-off switching losses - 572 - µJ Ets Total switching losses - 747 - µJ |
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