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STGW80H65DFB Datasheet(PDF) 8 Page - STMicroelectronics |
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STGW80H65DFB Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 18 page ![]() Electrical characteristics STGW80H65DFB, STGWT80H65DFB 8/18 DocID024366 Rev 8 Figure 14: Switching energy vs. temperature Figure 15: Switching energy vs. gate resistance Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. collector emitter voltage Figure 18: Switching time vs. collector temperature Figure 19: Switching time vs. gate resistance t 100 10 1 IC(A) (ns) 20 40 60 80 TJ= 175°C, VGE = 15V VCC= 400V, Rg = 10Ω 100 tf tdon 120 tr tdoff 140 GIPD160920131533FSR t 100 10 Rg (Ω) (ns) 4 8 TJ= 175°C, VGE = 15V VCC= 400V, IC= 80A 12 tr tdon tf tdoff 16 20 GIPD160920131539FSR |
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