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STL9N60M2 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL9N60M2
Description  N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL9N60M2 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID025655 Rev 2
3/16
STL9N60M2
Electrical ratings
16
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
4.8
A
I
D
Drain current (continuous) at T
C
= 100 °C
3
A
I
DM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
19
A
P
TOT
Total dissipation at T
C
= 25 °C
48
W
dv/dt
(2)
2.
I
SD
≤ 4.8 A, di/dt ≤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
=400 V
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
3.
V
DS ≤
480 V
MOSFET dv/dt ruggedness
50
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
150
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
2.6
°C/W
R
thj-amb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-ambient max
59
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not repetitive (pulse
width limited by T
jmax
)
1.5
A
E
AS
Single pulse avalanche energy (starting T
j
=25°C,
I
D
= I
AR
; V
DD
=50)
30
mJ



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