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STL12N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL12N65M5
Description  Very low intrinsic capacitance
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL12N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID17450 Rev 4
3/17
STL12N65M5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage
650
V
V
GS
Gate-source voltage
± 25
V
I
D
(1)
1.
Limited by maximum junction temperature
Drain current (continuous) at T
C
= 25 °C
8.5
A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C
4
A
I
DM
(1),(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
34
A
P
TOT
(1)
Total dissipation at T
C
= 25 °C
48
W
I
AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
1.9
A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
130
mJ
dv/dt
(3)
3.
I
SD
≤ 8.5 A, di/dt ≤ 400 A/μs, V
Peak ≤
V
(BR)DSS
, V
DD
= 400 V.
Peak diode recovery voltage slope
15
V/ns
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
2.6
°C/W
R
thj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu.
Thermal resistance junction-pcb max
59
°C/W



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