STL18N65M5 datasheet(3/17 Pages) STMICROELECTRONICS

3 / 17 page

DocID023634 Rev 2

3/17

STL18N65M5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

(1)

The value is rated according to Rthj-case and limited by package.

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

6.5

IDM

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

(1)

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

210

dv/dt (3)

ISD ≤ 15 A, di/dt ≤ 400 A/µs, VPeak ≤ V(BR)DSS, VDD = 400 V.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

2.2

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-amb max

°C/W

STL18N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

STL18N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL