STL19N60DM2 datasheet(3/13 Pages) STMICROELECTRONICS

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DocID026785 Rev 1

3/13

STL19N60DM2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

(1)

The value is rated according to Rthj-case and limited by package.

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

6.8

IDM

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

(1)

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

TBD

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

TBD

dv/dt (3)

ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD= 400 V

Peak diode recovery voltage slope

V/ns

dv/dt (4)

VDS ≤ 480 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.39

°C/W

Rthj-amb

(1)

When mounted on FR-4 board of inch², 2oz Cu.

Thermal resistance junction-ambient max

°C/W

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