STL19N60M2 datasheet(5/15 Pages) STMICROELECTRONICS

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STL19N60M2

Electrical characteristics

DocID028887 Rev 1

5/15

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

(1)

Source-drain

current

ISDM

(1),(2)

Source-drain

current

(pulsed)

VSD

(3)

Forward on

voltage

VGS = 0 V, ISD = 13 A

1.5

trr

Reverse

recovery time

ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 16: " Test circuit for inductive

load switching and diode recovery times")

305

Qrr

Reverse

recovery

charge

3.3

µC

IRRM

Reverse

recovery

current

trr

Reverse

recovery time

ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 16: " Test circuit

for inductive load switching and diode

recovery times"

417

Qrr

Reverse

recovery

charge

4.6

µC

IRRM

Reverse

recovery

current

Notes:

(1)

The value is rated according to Rthj-case and limited by package.

(2)

Pulse width is limited by safe operating area

(3)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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