This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

January 2014

DocID023669 Rev 3

1/15

15

STL30P3LLH6

P-channel 30 V, 0.024

Ω typ., 9 A STripFET™ VI DeepGATE™

Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet

Figure 1. Internal schematic diagram

Features

• R

DS(on)

* Q

g

industry benchmark

• Extremely low on-resistance R

DS(on)

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications

Description

This device is a P-channel Power MOSFET

developed using the 6

th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R

DS(on)

in all packages.

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

1

2

3

4

PowerFLAT™ 5x6

Order code

STL30P3LLH6

30 V

0.03

Ω

9 A

4.8 W

Table 1. Device summary

Order code

Marking

Package

Packaging

STL30P3LLH6

30P3L

PowerFLAT

TM

5x6

Tape and reel

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