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STL34N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STL34N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 15 page ![]() DocID023325 Rev 1 7/15 STL34N65M5 Electrical characteristics 15 Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Switching losses vs gate resistance (1) Figure 13. Normalized VDS vs temperature 1. Eon including reverse recovery of a SiC diode C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss AM14979v1 Eoss 6 4 2 0 0 100 VDS(V) (µJ) 400 8 200 300 10 12 500 600 AM14980v1 ID = 250 µA VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 AM05459v1 VGS = 10 V ID = 12 A RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 AM05460v1 E 300 200 100 0 0 20 RG( Ω) ( μJ) 10 30 400 500 40 ID=18A VDD=400V Eon Eoff VGS=10V AM14981v1 VDS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 ID = 1mA 1.08 AM10399v1 |
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