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STL42P4LLF6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL42P4LLF6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() March 2015 DocID025618 Rev 2 1/14 This is information on a product in full production. www.st.com STL42P4LLF6 P- channel 40 V, 0.0155 Ω typ.,42 A, STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL42P4LLF6 40 V 0.018 Ω 42 A 75 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 1: Device summary Order code Marking Package Packaging STL42P4LLF6 42P4LLF6 PowerFLAT™ 5x6 Tape and reel 1 2 3 4 PowerFLAT™ 5x6 AM01475v4 D(5, 6, 7, 8) G(4) S(1, 2, 3) |
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