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STL42P6LLF6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL42P6LLF6
Description  P-channel -60 V, 23 mΩ typ., -42 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL42P6LLF6 Datasheet(HTML) 5 Page - STMicroelectronics

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STL42P6LLF6
Electrical characteristics
DocID025457 Rev 4
5/16
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
-42
A
ISDM(1)
Source-drain current
(pulsed)
-
-168
A
VSD (2)
Forward on voltage
VGS = 0 V, ISD = -9 A
-
-1.1
V
trr
Reverse recovery time
ISD = -9 A, di/dt = 100 A/µs,
VDD = -4.8 V, Tj = 150 °C
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
34
ns
Qrr
Reverse recovery charge
-
48
nC
IRRM
Reverse recovery current
-
-2.8
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%



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