STL45N65M5 datasheet(3/16 Pages) STMICROELECTRONICS

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STL45N65M5

Electrical ratings

DocID023354 Rev 2

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Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at Tcase = 25 °C

22.5

Drain current (continuous) at Tcase = 100 °C

IDM(1)(2)

Drain current (pulsed)

PTOT(1)

Total dissipation at Tcase = 25 °C

160

ID(3)

Drain current (continuous) at Tamb = 25 °C

3.8

Drain current (continuous) at Tamb = 100 °C

2.4

PTOT(3)

Total dissipation at Tamb = 25 °C

2.8

dv/dt(4)

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) The value is rated according to Rthj-case and limited by package.

(2) Pulse width limited by safe operating area.

(3) When mounted on a 1-inch² FR-4, 2oz Cu board.

(4) ISD ≤ 22.5 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.78

°C/W

Rthj-amb(1)

Thermal resistance junction-ambient

Notes:

(1) When mounted on a 1-inch² FR-4, 2oz Cu board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

EAS(2)

Single pulse avalanche energy

810

Notes:

(1) Pulse width limited by Tjmax.

(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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