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STU13N60M2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STU13N60M2
Description  N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU13N60M2 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID023937 Rev 5
5/18
STP13N60M2, STU13N60M2, STW13N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
I
SD
Source-drain current
-
11
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
44
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 11 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 11 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 18)
-297
ns
Q
rr
Reverse recovery charge
-
2.8
μC
I
RRM
Reverse recovery current
-
18.5
A
t
rr
Reverse recovery time
I
SD
= 11 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
=150 °C
(see
Figure 18)
-394
ns
Q
rr
Reverse recovery charge
-
3.8
μC
I
RRM
Reverse recovery current
-
19
A



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