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STP16N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP16N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() March 2015 DocID027198 Rev 1 1/16 This is information on a product in full production. www.st.com STP16N60M2, STU16N60M2 N- channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STP16N60M2 600 V 0.32 Ω 12 A STU16N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STP16N60M2 16N60M2 TO-220 Tube STU16N60M2 IPAK 3 2 1 TAB IPAK 1 2 3 TAB TO-220 AM15572v1_tab D(2, TAB) G(1) S(3) |
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