STP105N3LL datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STP105N3LL

4/13

DocID023976 Rev 2

Electrical characteristics

CASE

= 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

Voltage

= 250 μA, V

= 0

DSS

Zero gate voltage drain

current (V

= 0)

= 30 V

μA

= 30 V, Tc = 125 °C

μA

GSS

Gate body leakage current

= 0)

= ± 20 V

100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA1

2.5

DS(on)

Static drain-source on-

resistance

= 10 V, I

= 40 A

2.7

3.5

= 4.5 V, I

= 40 A

3.5

4.5

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

iss

Input capacitance

= 25 V, f=1 MHz,

= 0

-3500

oss

Output capacitance

400

rss

Reverse transfer

capacitance

-380

Total gate charge

= 15 V, I

= 80 A

= 4.5 V

Figure 14

-42

Gate-source charge

Gate-drain charge

Gate input resistance

f = 1 MHz, gate DC

Bias = 0,

test signal level = 20 mV,

= 0

-1

Table 6. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

= 15 V, I

= 40 A,

= 4.7

Ω, V

= 5 V

Figure 13

-19

Rise time

d(off)

Turn-off delay time

24.5

Fall time

23.4

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