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STP110N8F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP110N8F6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  This is information on a product in full production. December 2014 DocID026831 Rev 2 1/13 STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1. Internal schematic diagram Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. TO-220 1 2 3 TAB Order code VDS RDS(on)max ID PTOT STP110N8F6 80 V 0.0065 Ω 110 A 200 W Table 1. Device summary Order code Marking Package Packing STP110N8F6 110N8F6 TO-220 Tube www.st.com |
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