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STP170N8F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP170N8F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  This is information on a product in full production. February 2015 DocID024550 Rev 3 1/12 12 STP170N8F7 N-channel 80 V, 0.003 Ω typ., 120 A, STripFET™ F7 Power MOSFET in TO-220 package Datasheet — production data Figure 1. Internal schematic diagram Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 1 2 3 TAB TO-220 Order code VDS RDS(on) max. ID PTOT STP170N8F7 80 V 0.0039 Ω 120 A 250 W Table 1. Device summary Order code Marking Package Packaging STP170N8F7 170N8F7 TO-220 Tube www.st.com |
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