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STR2P3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STR2P3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  November 2014 DocID024613 Rev 2 1/12 This is information on a product in full production. www.st.com STR2P3LLH6 P- channel 30 V, 0.048 Ω typ., 2 A STripFET™ H6 Power MOSFET in a SOT-23 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STR2P3LLH6 30 V 0.056 Ω @ 10 V 2 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET develo ped using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order codes Marking Package Packaging STR2P3LLH6 2K3L SOT-23 Tape and reel For the P-channel MOSFET the actual polarity of the voltages and the current must be reversed. |
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