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STS1DN45K3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STS1DN45K3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. April 2010 Doc ID 17338 Rev 1 1/10 10 STS1DN45K3 Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3™ Power MOSFET in SO-8 Features ■ 100% avalanche tested ■ Low input capacitances and gate charge ■ Low gate input resistance Application ■ Switching applications Description SuperMESH3™ is a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID Pw STS1DN45K3 450 V < 3.8 Ω 0.5 A 1.7 W SO-8 Table 1. Device summary Order codes Marking Packages Packaging STS1DN45K3 1ll45 SO-8 Tape and reel www.st.com Obsolete Product(s) - Obsolete Product(s) |
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