| Electronic Components Datasheet Search |
|
STS3P6F6 Datasheet(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STS3P6F6 Datasheet(HTML) 3 Page - STMicroelectronics |
|
3 / 16 page ![]() DocID024437 Rev 2 3/16 STS3P6F6 Electrical ratings 1 Electrical ratings Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at Tpcb = 25 °C 3 A ID Drain current (continuous) at Tpcb = 100 °C 2 A IDM (1) 1. Pulse width is limited by safe operating area. Drain current (pulsed) 12 A PTOT Total dissipation at Tpcb = 25 °C 2.7 W Tj Pstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 15 mm2, 2 Oz Cu, t<10 sec Thermal resistance junction-pcb max 47 °C/W |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |