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STS3P6F6 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STS3P6F6
Description  Low gate drive power losses
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS3P6F6 Datasheet(HTML) 3 Page - STMicroelectronics

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STS3P6F6
Electrical ratings
1
Electrical ratings
Note:
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at Tpcb = 25 °C
3
A
ID
Drain current (continuous) at Tpcb = 100 °C
2
A
IDM
(1)
1. Pulse width is limited by safe operating area.
Drain current (pulsed)
12
A
PTOT
Total dissipation at Tpcb = 25 °C
2.7
W
Tj
Pstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-pcb
(1)
1. When mounted on FR-4 board of 15 mm2, 2 Oz Cu, t<10 sec
Thermal resistance junction-pcb max
47
°C/W



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