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TMS45160 Datasheet(PDF) 13 Page - Texas Instruments |
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TMS45160 Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 23 page ![]() TMS45160, TMS45160P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS160D – AUGUST 1992 – REVISED JUNE 1995 13 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS UCAS LCAS A0 – A8 W DQ0 – DQ15 OE tWC tRAS tT tRCD tCSH tCRP tRP tCP tASR tRAD tRAH tASC tCAL tRAL tCAH tAR tWCS tWCH tRWL tWP tDHR tDH tDS Valid Data In Row Address Column Address tCAS tRSH tCWL tCLCH (see Note A) tWCR Don’t Care Don’t Care Don’t Care Don’t Care Don’t Care Don’t Care NOTES: A. In order to hold the address latched by the first xCAS going low, the parameter tCLCH must be met. B. xCAS order is arbitrary. Figure 4. Early-Write-Cycle Timing |
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