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TRD236D Datasheet(PDF) 4 Page - STMicroelectronics |
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TRD236D Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Electrical characteristics TRD236D 4/12 Doc ID 018985 Rev 1 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0 ) VCE = 700 V VCE = 700 V TC = 125 °C 0.1 0.5 mA mA ICEO Collector cut-off current (IB = 0 ) VCE = 400 V 0.25 mA V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 10 mA 918 V VCEO(sus) (1) 1. Pulsed duration = 300 ms, duty cycle ≤ 1.5% Collector-emitter sustaining voltage (IB = 0) IC = 10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.8 A __ IB = 0.1 A IC = 2.5 A _ IB = 0.6 A 1.1 1.3 V V VBE(sat) (1) Base-emitter saturation voltage IC = 1 A __ IB = 0.2 A IC = 2.5 A __ IB = 0.5 A 1.2 1.3 V V hFE DC current gain IC = 10 mA VCE = 5 V IC = 2.5 A VCE = 5 V 10 828 ts tf Inductive load Storage time Fall time VCC = 200 V IC = 2 A IB1 = 0.4 A VBE(off) = -5 V RBB = 0 Ω L = 200 µH (see Figure 13) 0.6 0.1 µs µs VF Diode forward voltage IF = 2 A 2.5 V Obsolete Product(s) - Obsolete Product(s) |
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