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TS110-7 Datasheet(PDF) 5 Page - STMicroelectronics |
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TS110-7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() DocID022271 Rev 4 5/10 TS110-7 Characteristics 10 Figure 11. Surge peak on-state current versus number of cycles Figure 12. Non-repetitive surge peak on-state current, and corresponding values of I2t I(A) TSM 0 2 4 6 8 10 12 14 16 18 20 22 24 26 1 10 100 1000 Non repetitive Tj initial=25 °C SMBF-3L Repetitive TA=25 °C TO-92 Repetitive TA=25 °C Number of cycles t =10ms p One cycle I (A), I t (A s) TSM 22 1 10 100 1000 0.01 0.10 1.00 10.00 ITSM I²t Tj initial=25 °C t (ms) p Sinusoidal pulse with width tp < 10 ms Figure 13. On-state characteristics (maximum values) Figure 14. Thermal resistance junction to ambient versus copper surface under anode (SMBflat-3L) I (A) TM 0.1 1.0 10.0 100.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tj max : Vto =0.9 V Rd =200 m Ω TJ=125°C TJ=25°C V (V) TM R (°C/W) th(j-a) 50 60 70 80 90 100 110 120 130 140 150 160 170 01 23 45 S(cm²) Epoxy printed circuit board FR4 copper thickness = 35 µm |
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