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ST1S14 Datasheet(PDF) 8 Page - STMicroelectronics

Part # ST1S14
Description  Power good open collector output
PDF  46 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST1S14 Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
ST1S14
8/46
DocID17977 Rev 2
3
Electrical characteristics
All the population tested at TJ = 25 °C, VCC =12 V, VEN1 = 0 V, VEN2 = VCC unless otherwise
specified.
The specification is guaranteed from (-40 to +125 °C) TJ temperature range by design,
characterization, and statistical correlation.
Table 6. Electrical characteristics
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
VIN
Operating input
voltage range
5.5
48
V
RDS(on)
MOSFET on
resistance
ISW=1 A
0.2
0.4
Ω
ISW
Maximum limiting
current
3.7
4.5
5.2
A
tHICCUP Hiccup time
16
ms
fSW
Switching frequency
600
850
1000
kHz
Duty cycle
(1)
90
%
TON MIN
Minimum conduction
time of the power
element
(1)
90
ns
TOFF MIN
Minimum conduction
time of the external
diode
(1)
75
90
120
ns
DC characteristics
VFB
Voltage feedback
ILOAD=0 A
1.202
1.22
1.239
V
ILOAD=10 mA to 3 A
1.196
1.22
1.245
V
IFB
FB biasing current
50
nA
Iq
Quiescent current
VFB=2 V
1.3
2
mA
VFB=2 V, VIN=48 V
1.7
2.4
mA
Iqst-by
Standby quiescent
current
Device OFF (see Table 2)16
34
μA
PG
Power good threshold
VFB rising edge
0.92*
VOUT
V
VFB falling edge
0.8*
VOUT
V
PG output voltage
(open collector active)
ISINK=6 mA
0.4
V
Inhibit



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