www.irf.com

1

4/1/04

IRF6623

Notes

 through ˆ are on page 2

Description

achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and

vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-

turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, IMPROVING previous best thermal resistance by 80%.

The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6623 has been optimized for parameters that are

critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in

the control FET socket.

Qg(typ.)

20V

5.7m

Ω@V

11nC

9.7m

Ω@V

DirectFET

™ ISOMETRIC

ST

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

SQ

SX

ST

MQ

MX

MT

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

™

Power Dissipation

g

Power Dissipation

g

W

Power Dissipation

Single Pulse Avalanche Energy

d

mJ

Avalanche Current

Ù

A

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Ambient

fj

–––

58

Junction-to-Ambient

gj

12.5

–––

Junction-to-Ambient

hj

20

–––

°C/W

Junction-to-Case

ij

–––

3.0

Junction-to-PCB Mounted

1.0

–––

Max.

16

13

120

±20

20

55

-40 to + 150

2.1

0.017

1.4

42

43

12

PD - 95824B