MDD3754RH datasheet(2/6 Pages) MGCHIP

2 / 6 page

October 2008. Version 1.0

MagnaChip Semiconductor Ltd

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDD3754RH

-55~150

TO-252

Tape & Reel

Halogen Free

Electrical Characteristics (TJ =25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = -250µA, VGS = 0V

-40

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

-1.0

-2.0

-3.0

Zero Gate Voltage Drain Current

IDSS

VDS = -32V, VGS = 0V

-1

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

µA

VGS = -10V, ID = -6A

Drain-Source ON Resistance

RDS(ON)

VGS = -4.5V, ID = -4A

Forward Transconductance

gFS

VDS = -10V, ID = -6A

Dynamic Characteristics

Total Gate Charge

19.2

Gate-Source Charge

Qgs

3.1

Gate-Drain Charge

Qgd

VDD = -28V, ID = -6A,

VGS = 10V

4.4

Input Capacitance

Ciss

868

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

VDS = -25V, VGS = 0V,

f = 1.0MHz

125

Turn-On Delay Time

td(on)

11.0

Turn-On Rise Time

21.4

Turn-Off Delay Time

td(off)

32.5

Turn-Off Fall Time

VGS = -10V ,VDD = -20V,

ID = -1A, RGEN=3.3

15.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = -6A, VGS = 0V

-0.88

1.2

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

IS = -6A, di/dt=100A/us

Note :

Surface mounted RF4 board with 2oz. Copper.

PD is based on TJ(MAX)=150

OC, P

D(TC=25

OC) is based on Rθ

JC.

Starting TJ=25°C, L=1mH, IAS=-9A VDD=-20V, VGS=-10V

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