MDF11N65BTH datasheet(1/6 Pages) MGCHIP

Part #	MDF11N65BTH

Description	N-Channel MOSFET 650V, 12A, 0.65(ohm)

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

Logo

1 / 6 page

Aug 2011 Version 1.1

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current

TC=25

oC

ID

12*

A

TC=100

oC

7.7*

A

Pulsed Drain Current

(1)

IDM

48*

A

Power Dissipation

TC=25

oC

PD

49.6

W

Derate above 25

oC

0.4

W/

oC

Repetitive Avalanche Energy

(1)

EAR

18.1

mJ

Peak Diode Recovery dv/dt

(3)

dv/dt

4.5

V/ns

Single Pulse Avalanche Energy

(4)

EAS

750

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

* Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

(1)

RθJC

2.52

MDF11N65B

N-Channel MOSFET 650V, 12A, 0.65

General Description

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Features

VDS = 650V

ID = 12A

@ VGS = 10V

RDS(ON) ≤ 0.65

@ VGS = 10V

Applications

Power Supply

PFC

High Current, High Speed Switching

D

G

S

TO-220F

MDF Series

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MDF11N65BTH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

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