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MDF1921 Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

Part # MDF1921
Description  Single N-channel Trench MOSFET 100V, 60A, 4.8m(ohm)
PDF  6 Pages
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF1921 Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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Mar. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
1
Absolute Maximum Ratings (Ta = 25
oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(1)
TC=25
oC
ID
60
A
TC=100
oC
38
Pulsed Drain Current
IDM
240
Power Dissipation
TC=25
oC
PD
36
W
TC=100
oC
15
Single Pulse Avalanche Energy
(2)
EAS
200
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
(1)
RθJA
62.5
oC/W
Thermal Resistance, Junction-to-Case
RθJC
3.5
MDF1921
Single N-channel Trench MOSFET 100V, 60A, 4.8m
Ω
Features
VDS = 100V
ID = 60A @VGS = 10V
RDS(ON)
< 4.8
mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
General Description
The MDF1921 uses advanced MagnaChip
’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDF1921 is suitable device for Synchronous
Rectification for Server / Adapter and general purpose
applications.
TO-220F
D
G
S


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