MDHT3N40 datasheet(2/6 Pages) MGCHIP

2 / 6 page

Jun 2012. Version 1.5

MagnaChip Semiconductor Ltd

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDHT3N40URH

-55~150

SOT-223

Reel and Tape

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

400

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

3.0

5.0

Drain Cut-Off Current

IDSS

VDS = 400V, VGS = 0V

µA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

100

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 0.75A

2.8

3.4

Forward Transconductance

gfs

VDS = 30V, ID = 0.75A

2.0

Dynamic Characteristics

Total Gate Charge

VDS = 320V, ID = 3.0A,

VGS = 10V

5.1

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

3.9

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

167

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

Turn-On

Delay Time

td(on)

VGS = 10V, VDS = 200V, ID = 3.0A,

RG = 25

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current

1.5

Source-Drain Diode Forward Voltage

VSD

IS = 1.5A, VGS = 0V

1.4

Body Diode Reverse Recovery Time

trr

IF = 3.0A, di/dt = 100A/µs

(3)

185

Body Diode Reverse Recovery Charge

Qrr

0.6

µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3. ISD ≤3.0A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25°C

4. L=8.75mH, IAS=3.0A, VDD=50V, Rg =25 , Starting TJ=25°C

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