MDIS5N50 datasheet(2/6 Pages) MGCHIP

2 / 6 page

Jul.2012. Version1.0

MagnaChip Semiconductor Ltd

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDIS5N50TH

-55~150

TO-251-VS (IPAK-VS)

Tube

Halogen Free

Electrical Characteristics (Ta = 25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

500

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

3.0

5.0

Drain Cut-Off Current

IDSS

VDS = 500V, VGS = 0V

µA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

100

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 2.2A

1.15

1.4

Forward Transconductance

gfs

VDS = 30V, ID = 2.2A

Dynamic Characteristics

Total Gate Charge

VDS = 400V, ID = 5.0A, VGS = 10V

12.2

Gate-Source Charge

Qgs

3.6

Gate-Drain Charge

Qgd

4.7

6.5

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

500

650

Reverse Transfer Capacitance

Crss

4.0

Output Capacitance

Coss

Turn-On

Delay Time

td(on)

VGS = 10V, VDS = 250V, ID = 5.0A,

RG = 25

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

4.4

Source-Drain Diode Forward Voltage

VSD

IS = 4.4A, VGS = 0V

1.4

Body Diode Reverse Recovery Time

trr

IF = 5.0A, dl/dt = 100A/µs

270

Body Diode Reverse Recovery

Charge

Qrr

1.8

µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%, pulse width limited by junction temperature TJ(MAX) = 150°C

3. ISD ≤ 4.4A, di/dt ≤ 200A/us, VDD ≤BVDSS, Starting TJ = 25°C

4. L = 21.4mH, IAS =4.4A, VDD = 50V, Rg = 25 , Starting TJ = 25°C

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