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IXFH75N10 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFH75N10 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() 1 - 4 © 2000 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 100 V V DGR T J = 25 °C to 150°C; R GS = 1 MW 100 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C 67N10 67 A 75N10 75 A I DM T C = 25 °C, pulse width limited by T JM 67N10 268 A 75N10 300 A I AR T C = 25 °C 67N10 67 A 75N10 75 A E AR T C = 25 °C30 mJ dv/dt I S £ I DM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns T J £ 150°C, RG = 2 W P D T C = 25 °C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g TO-247 AD (IXFH) HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t rr, HDMOS TM Family Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 250 mA 100 V V GS(th) V DS = V GS, ID = 4 mA 2.0 4 V I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 • V DSS T J = 25°C 250 mA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, ID = 0.5 ID25 67N10 0.025 W 75N10 0.020 W Pulse test, t £ 300 ms, duty cycle d £ 2 % TO-204 AE (IXFM) V DSS I D25 R DS(on) IXFH/IXFM 67 N10 100 V 67 A 25 m W IXFH/IXFM 75 N10 100 V 75 A 20 m W t rr £ 200 ns G = Gate, D = Drain, S = Source, TAB = Drain Features q International standard packages q Low R DS (on) HDMOS TM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Synchronous rectification q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q AC motor control q Temperature and lighting controls q Low voltage relays Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) q Space savings q High power density D G 91521F (10/95) (TAB) IXYS reserves the right to change limits, test conditions, and dimensions. |
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