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AS4C64M16D1 Datasheet(PDF) 39 Page - Alliance Semiconductor Corporation

Part # AS4C64M16D1
Description  Programmable Burst
PDF  61 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C64M16D1 Datasheet(HTML) 39 Page - Alliance Semiconductor Corporation

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AS4C64M16D1
Confidential
39
Rev. 2.0
Oct. /2014
AC CHARACTERISTICS
-6
PARAMETER
SYMBOL MIN
MAX UNITS NOTES
Address and control input hold time
t
IH
F
0.75
ns
14
(fast slew rate)
Address and control input setup time
t
ISF
0.75
ns
14
(fast slew rate)
Address and control input hold time
t
IH
S
0.80
ns
14
(slow slew rate)
Address and control input setup time
t
ISS
0.80
ns
14
(slow slew rate)
Control & Address input width (for each input)
t
IPW
2.2
ns
53
LOAD MODE REGISTER command cycle time
t
MRD
2
t
CK
DQ-DQS hold, DQS to first DQ to go non-valid,
t
QH
t
HP
ns
25, 26
per access
-
t
QHS
Data hold skew factor
t
QHS
0.55
ns
ACTIVE to PRECHARGE command
t
RAS
42
70,000
ns
35
ACTIVE to READ with Auto precharge
t
RAP
18
ns
46
command
ACTIVE to ACTIVE/AUTO REFRESH
t
RC
60
ns
command period
AUTO REFRESH command period
t
RFC
120
ns
50
ACTIVE to READ or WRITE delay
t
RCD
18
ns
PRECHARGE command period
t
RP
18
ns
DQS read preamble
t
RPRE
0.9
1.1
t
CK
42
DQS read postamble
t
RPST
0.4
0.6
t
CK
ACTIVE bank a to ACTIVE bank b command
t
RRD
12
ns
DQS write preamble
t
WPRE
0.25
t
CK
DQS write preamble setup time
t
WPRES
0
ns
20, 21
DQS write postamble
t
WPST
0.4
0.6
t
CK
19
Write recovery time
t
WR
15
ns
Internal WRITE to READ command delay
t
WTR
1
t
CK
Data valid output window
na
t
QH -
t
DQSQ
ns
25
Average periodic refresh interval
t
REFI
7.8
us
Terminating voltage delay to VDD
t
VTD
0
ns
Exit SELF REFRESH to non-READ command
t
XSNR
75
ns
Exit SELF REFRESH to READ command
t
XSRD
200
t
CK



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