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MDF7N50BTH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

Part # MDF7N50BTH
Description  N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)
PDF  8 Pages
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF7N50BTH Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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Jan 2012. Version 1.0
MagnaChip Semiconductor Ltd
.
1
Absolute Maximum Ratings (Ta = 25
oC)
Characteristics
Symbol
MDP7N50B
MDF7N50B
Unit
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
TC=25
oC
ID
7.0
7.0*
A
TC=100
oC
4.2
4.2*
A
Pulsed Drain Current
(1)
IDM
28
28*
A
Power Dissipation
TC=25
oC
PD
114
36
W
Derate above 25
oC
0.91
0.29
W/
oC
Repetitive Avalanche Energy
(1)
EAR
11.4
mJ
Peak Diode Recovery dv/dt
(3)
dv/dt
4.5
V/ns
Single Pulse Avalanche Energy
(4)
EAS
270
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Symbol
MDP5N50B
MDF5N50B
Unit
Thermal Resistance, Junction-to-Ambient
(1)
RθJA
62.5
62.5
oC/W
Thermal Resistance, Junction-to-Case
(1)
RθJC
1.1
3.5
MDP7N50B / MDF7N50B
N-Channel MOSFET 500V, 7.0 A, 0.9
General Description
The MDP/F7N50B uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F7N50B is suitable device for SMPS, high
Speed switching and general purpose applications.
Features
VDS = 500V
ID = 7.0A
@VGS = 10V
RDS(ON) ≤ 0.9
@VGS = 10V
Applications
Power Supply
PFC
Ballast


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