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AS6C6264A Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation |
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AS6C6264A Datasheet(HTML) 3 Page - Alliance Semiconductor Corporation |
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3 / 10 page ![]() MARCH 2009 AS6C6264A 8K X 8 BIT LOW POWER CMOS SRAM MARCH/2009 ALLIANCE MEMORY PAGE 3 of 10 CHARACTERISTICS All voltages are referenced to VSS = 0 V (ground). All characteristics are valid in the power supply voltage range and in the operating temperature range specified. Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of VI, as well as input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V, with the exception of the tdis-times, in which cases transition is measured } 200 mV from steady-state voltage. a. Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability b. Maximum voltage is 7 V c. Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s. |
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