MDS1653 datasheet(2/6 Pages) MGCHIP

2 / 6 page

Feb. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

ROHS Status

MDS1653URH

-55~150

SOIC-8

Tape & Reel

Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

1.9

3.0

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 12A

8.5

12.0

mΩ

VGS = 4.5V, ID = 10A

12.0

17.5

Forward Transconductance

gfs

VDS = 5V, ID = 12A

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15V, ID = 12A,

VGS = 10V

17.5

Total Gate Charge

Qg(4.5V)

9.0

Gate-Source Charge

Qgs

3.0

Gate-Drain Charge

Qgd

3.5

Input Capacitance

Ciss

VDS = 15V, VGS = 0V,

f = 1.0MHz

956

Reverse Transfer Capacitance

Crss

108

Output Capacitance

Coss

190

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 15V,

RL = 3Ω, RG = 3Ω

7.2

Rise Time

23.6

Turn-Off Delay Time

td(off)

25.2

Fall Time

10.6

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 1A, VGS = 0V

0.72

1.0

Body Diode Reverse Recovery Time

trr

IF = 12A, dl/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

Note :

1. Surface mounted FR-4 board with 2oz. Copper.

2. Starting TJ = 25°C, L = 1mH, IAS = 10A, VDD = 15V, VGS = 10V.

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