MDS5601 datasheet(2/6 Pages) MGCHIP

2 / 6 page

July. 2010. Version 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

Rohs Status

MDS5601URH

-55~150

SO-8

Tape & Reel

Halogen Free

Electrical Characteristics (TJ = 25oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.3

2.0

2.7

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

μA

TJ=55

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 9.0A

9.5

10.5

mΩ

TJ=125

14.3

18.8

VGS = 4.5V, ID = 7.0A

13.1

16.1

Forward Transconductance

gfs

VDS = 10V, ID = 9A`

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15.0V, ID = 9.0A,

VGS = 10V

11.0

15.7

-20.4

Total Gate Charge

Qg(4.5V)

5.4

7.7

10.0

Gate-Source Charge

Qgs

3.4

Gate-Drain Charge

Qgd

2.5

Input Capacitance

Ciss

VDS = 15.0V, VGS = 0V,

f = 1.0MHz

682

975

1268

Reverse Transfer Capacitance

Crss

126

Output Capacitance

Coss

143

204

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 15.0V,

RL = 1.5Ω, RG = 3.0Ω

5.9

Rise Time

21.3

Turn-Off Delay Time

td(off)

21.4

Fall Time

12.4

Gate Resistance

f=1 MHz

1.6

3.0

Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 1.0A, VGS = 0V

0.72

1.0

Body Diode Reverse Recovery Time

trr

IF = 9.0A, dl/dt = 100A/μs

27.2

Body Diode Reverse Recovery Charge

Qrr

11.5

Note :

1. Surface mounted RF4 board with 2oz. Copper. Continuous current at TC=25℃ is silicon limited.

2. EAS is tested at starting Tj =25℃, L = 1.0mH, IAS = 8A, VDD = 15V, VGS = 10V.

3. T < 10sec.

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