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NE57600GD Datasheet(PDF) 4 Page - NXP Semiconductors |
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NE57600GD Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  Philips Semiconductors Product data NE57600 One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection 2001 Oct 03 4 MAXIMUM RATINGS SYMBOL PARAMETER MIN. MAX. UNIT VIN Input voltage –0.3 +18 V VCF(max) CF pin voltage – VCC – 28 V VVM(max) VM pin voltage – VCC – 28 V Tamb Operating ambient temperature range –20 +70 °C Tstg Storage temperature –40 +125 °C PD Power dissipation – 200 mW ELECTRICAL CHARACTERISTICS Characteristics measured with Tamb = 25 °C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS Min. Typ. Max. UNIT ICC1 Current consumption 1 VCC = 3.6 V: Set between CF–GND: 910 k Ω connected 10.0 14.0 µA ICC2 Current consumption 2 VCC = 3.6 V: IC only between CF–GND: 910 k Ω connected 6.0 10.0 µA ICC3 Current consumption 3 VCC = 3.6 V: Discharge FET OFF between CF–GND: 910 k Ω not connected TBD TBD µA ICC4 Current consumption 4 VCC = 1.9 V: Discharge FET OFF between CF–GND: 910 k Ω not connected 0.05 0.3 µA ICC5 Current consumption 5 VCC = 4.5 V: Set between CF–BG: 910 k Ω connected 35 60 µA VOV(th) Over-charge voltage Tamb = 0 °C ∼ 50 °C VCC: L → H 4.325 4.350 4.375 V VOV(hyst) Over-charge hysteresis VCC: H → L 100 200 300 mV VUV(th) Over-discharge voltage VCC: H → L 2.30 2.40 2.50 V VUV(rel) Release over-discharge mode 2.88 3.00 3.12 V VOC(th) Over-current detect level VVM: L → H 174 200 226 mV VOC(rel) Release over-current level VVM: H → L 130 mV Condition of release over-current mode Load condition 50 M Ω VSC Short detect level 1.3 V tDLY(OD) Over-discharge dead time 7.0 10.0 15.0 ms tOC(DT) Over-current dead time VM: 0 V → 0.5 V 7.0 10.0 15.0 ms tDLY(SC) Short detect delay time VM: 0 V → 2 V 0.02 0.20 ms tOLY(OV) Over-charge dead time CTD = 0.01 µF 50 100 150 ms VGDH DF pin LOW level VCC = 3.6 V VCC–0.3 VCC–0.1 VCC V IDFH1 DF pin source current 1 VDF = VCC – 1.0 V –100 –30 µA IDFH2 DF pin source current 2 VDF = VCC – 0.3 V –0.40 –0.07 µA IDFL1 DF pin sink current 1 VVM > 1.0 V; VDF = 1.0 V 50 300 µA IDFL2 DF pin sink current 2 VVM > 1.0 V; VDF = 0.3 V 30 100 µA ICF1 CF pin source current 1 VCF = VCC – 1.0 V –20 –10 µA ICF2 CF pin source current 2 VCF = VCC – 0.3 V –15 –5 µA VST Start trigger voltage VVM: 0 V → –0.5 V –0.2 –0.1 0 V VPRO Over-voltage charger protection VCC = 3.6 V, between GND–VM voltage –1.5 –2.5 –3.0 V VOV OV charge minimum voltage VCC = 0 V; Charger voltage 2.0 3.0 V |
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