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BZW06 Datasheet(PDF) 5 Page - STMicroelectronics |
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BZW06 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() BZW06 Characteristics DocID2972 Rev 4 5/9 Figure 7: Junction capacitance versus reverse applied voltage (bidirectional types) Figure 8: Peak forward voltage drop versus peak forward current Figure 9: Relative variation of thermal impedance junction to ambient versus pulse duration (printed circuit board FR4, eCU = 35 µm) Figure 10: Leakage current versus junction temperature 10 100 1000 10000 1 10 100 1000 VR(V) C(pF) F = 1 MHz V osc = 30 mVRMS T j = 25 °C BZW06-5V8B BZW06-13B BZW06-58B BZW06-171B 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VFM(V) T j = 25 °C T j = 125 °C IFM(A) 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tP(s) Recommended pad layout Zth(j-a)/Rth(j-a) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 25 50 75 100 125 150 175 Tj(°C) V R = VRM V BR > 10 V V R = VRM V BR < 10 V IR(nA) |
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