ESDALC5-1BF4 datasheet(3/10 Pages) STMICROELECTRONICS

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ESDALC5-1BF4

Characteristics

Figure 3. Leakage current versus junction

temperature (typical values)

Figure 4. Junction capacitance versus applied

voltage (typical values)

IR ( nA)

0.1

100

125

150

Tj °C

()

VR = VRM = 5 V

IO/IO

C (pF)

234

Tj = 25°C

F = 1 MHz

= 30 mV

OSC

IO/IO

VR V

()

Figure 5. ESD response to IEC 61000-4-2

(+8 kV contact discharge)

Figure 6. ESD response to IEC 61000-4-2

(-8 kV contact discharge)

5 V/div

20 ns/div

10 V

V : Peak clamping voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

14 V

12 V

1 30 V

5 V/div

-10 V

-31 V

-13 V

-15 V

V : Peak clamping voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

20 ns/div

Figure 7. Dynamic resistance

Figure 8. S21 attenuation measurement result

IPP (A)

Positive

polarity

Negative

polarity

VCL (V)

100k

10M

100M

10G

-36

-33

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

ESDALC5-1BF4

S21(dB)

F(Hz)

ESDALC5-1BF4 Datasheet(PDF) 3 Page - STMicroelectronics

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