ESDAVLC8-4BN4 datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

ESDAVLC8-4BN4

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DocID022192 Rev 3

Characteristics

Figure 2. Electrical characteristics (definitions)

Note:

For component test in its final application, the minimum clamping voltage has to be 20 V on

VBR1 (GND to I/O) and 25 V on VBR2 (I/O to GND).

Table 1. Absolute maximum ratings (Tamb = 25 °C)

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage, IEC 61000-4-2, level 4 (contact discharge)

PPP

Peak pulse power dissipation (8/20 µs)(1)

Tj initial = Tamb

1. For a surge greater than the maximum values, the diode will fail in short-circuit.

GND to I/O

I/O to GND

Ipp

Peak pulse current (8/20 µs)

1.6

Maximum junction temperature range

-40 to 125

°C

Tstg

Storage temperature range

-55 + 150

°C

Table 2. Electrical characteristics (values, Tamb = 25 °C)

Symbol

Test conditions

Min.

Typ.

Max.

Unit

VBR1

IR = 1 mA, GND to I/O

8.5

VBR2

IR = 1 mA, I/O to GND

14.5

IRM

VRM = 3 V

VCL

Ipp = 1 A, 8/20 µs, GND to I/O

Ipp = 1 A, 8/20 µs, I/O to GND

CVI/O = 0 V, F = 1 MHz, Vosc = 30 mV

4.5

5.5

Dynamic resistance,

pulse width 100 ns

I/O to GND

0.36

GND to I/O

0.28

Symbol

Parameter

Breakdown voltage

Leakage current @ V

Stand-off voltage

Peak pulse current

Clamping voltage

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