Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

SI7705DN Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI7705DN
Description  Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7705DN Datasheet(HTML) 2 Page - Vishay Siliconix

  SI7705DN Datasheet HTML 1Page - Vishay Siliconix SI7705DN Datasheet HTML 2Page - Vishay Siliconix SI7705DN Datasheet HTML 3Page - Vishay Siliconix SI7705DN Datasheet HTML 4Page - Vishay Siliconix SI7705DN Datasheet HTML 5Page - Vishay Siliconix SI7705DN Datasheet HTML 6Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Si7705DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71607
S-22520—Rev. B, 27-Jan-03
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
MOSFET
35
44
t
v 10 sec
Schottky
51
64
Junction-to-Ambienta
MOSFET
RthJA
75
94
_
Steady State
Schottky
91
115
_C/W
MOSFET
4
5
Junction-to-Case (Drain)
Steady State
Schottky
RthJC
10
12
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 mA
-0.45
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
VDS = -16 V, VGS = 0 V
-1
m
Zero Gate Voltage Drain Current
IDSS
VDS = -16 V, VGS = 0 V, TJ = 85_C
-5
mA
On-State Drain Currenta
ID(on)
VDS v -5 V, VGS = -4.5 V
-20
A
VGS = -4.5 V, ID = -6.3 A
0.040
0.048
Drain-Source On-State Resistancea
rDS(on)
VGS = -2.5 V, ID = -5.3 A
0.054
0.068
W
DS(on)
VGS = -1.8 V, ID = -1 A
0.070
0.090
Forward Transconductancea
gfs
VDS = -10 V, ID = -6.3 A
14
S
Diode Forward Voltagea
VSD
IS = -2.3 A, VGS = 0 V
-0.8
-1.2
V
Dynamicb
Total Gate Charge
Qg
11
17
Gate-Source Charge
Qgs
VDS = -10 V, VGS = -4.5 V, ID = -6.3 A
2.7
nC
Gate-Drain Charge
Qgd
DS
GS
D
1.9
Turn-On Delay Time
td(on)
70
105
Rise Time
tr
VDD = -10 V, RL = 10 W
75
110
Turn-Off Delay Time
td(off)
VDD = -10 V, RL = 10 W
ID ^ -1 A, VGEN = -4.5 V, RG = 6 W
20
30
ns
Fall Time
tf
45
70
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
IF = 0.5 A
0.42
0.48
Forward Voltage Drop
VF
IF = 0.5 A, TJ = 125_C
0.33
0.4
V
Vr = 20 V
0.002
0.100
Maximum Reverse Leakage Current
Irm
Vr = 20 V, TJ = 85_C
0.10
1
mA
rm
Vr = 20 V, TJ = 125_C
1.5
10
Junction Capacitance
CT
Vr = 10 V
31
pF



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com