2SC5812 datasheet(2/10 Pages) HITACHI

2 / 10 page

2SC5812

Rev.0, Nov. 2001, page 2 of 10

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

Collector to emitter voltage

VCEO

Emitter to base voltage

VEBO

1.5

Collector current

Collector power dissipation

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V(BR)CBO



VIC = 10

µA, IE = 0

Collector cutoff current

ICBO



0.1

µAVCB = 15 V, IE = 0

Collector cutoff current

ICEO



µAVCE = 4 V, RBE = Infinite

Emitter cutoff current

IEBO



0.1

µAVEB = 0.8 V, IC = 0

DC current transfer ratio

hFE

100

120

150



VCE = 1 V, IC = 5 mA

Reverse transfer capacitance

Cre



0.2



VCE = 1 V, Emitter ground,

f = 1 MHz

Collector output capacitance

Cob



0.4

0.7

VCB = 1 V, IE = 0,

f = 1 MHz

Gain bandwidth product

fT(1)



GHz

VCE = 1V, IC = 5 mA

Gain bandwidth product

fT(2)



GHz

VCE = 1V, IC = 20 mA

Forward transmission

coefficient

|S21|



VCE = 1 V, IC = 5 mA,

f = 900 MHz

Noise figure



1.0

1.7

VCE = 1 V, IC = 5 mA,

f = 900 MHz,

ΓS = ΓL = 50 Ω

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